Ab initio quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe 2 field-effect transistors

This work used DFT + NEGF to explore sub-1 nm Lg ML/BL α-MoTe ₂ FETs. The n-type ML α-MoTe ₂ FETs meets ITRS criteria for HP/LP, extending the application of ML α-MoTe ₂ in sub-1 nm Lg FETs. The p-type ML and BL α-MoTe ₂ FETs failed to meet ITRS criteria.