Ab inito Quantum Transport Simulation of the Sub-1 nm Gate-length Monolayer and Bilayer α-MoTe2 Field-Effect Transistors

Two-dimensional semiconducting α-MoTe2 is a promising channel material for the field-effect transistors (FETs). Recently, the performance limit of the sub-5 nm gate-length n- and p-type monolayer and multilayers α-MoTe2 transistors...