冯·诺依曼建筑
计算机科学
算术逻辑单元
记忆电阻器
加法器
算术
逻辑门
乘法(音乐)
内存处理
非常规计算
并行计算
计算机硬件
计算机体系结构
电子工程
数学
算法
电信
组合数学
情报检索
搜索引擎
延迟(音频)
按示例查询
工程类
Web搜索查询
操作系统
作者
Long Cheng,Yi Li,Kang‐Sheng Yin,Siyu Hu,Yu‐Ting Su,Miao‐Miao Jin,Zhuorui Wang,Ting‐Chang Chang,Xiangshui Miao
标识
DOI:10.1002/adfm.201905660
摘要
Abstract The development of in‐memory computing has opened up possibilities to build next‐generation non‐von‐Neumann computing architecture. Implementation of logic functions within the memristors can significantly improve the energy efficiency and alleviate the bandwidth congestion issue. In this work, the demonstration of arithmetic logic unit functions is presented in a memristive crossbar with implemented non‐volatile Boolean logic and arithmetic computing. For logic implementation, a standard operating voltage mode is proposed for executing reconfigurable stateful IMP, destructive OR, NOR, and non‐destructive OR logic on both the word and bit lines. No additional voltages are needed beyond “ V P ” and its negative component. With these basic logic functions, other Boolean functions are constructed within five devices in at most five steps. For arithmetic computing, the fundamental functions including an n ‐bit full adder with high parallelism as well as efficient increment, decrement, and shift operations are demonstrated. Other arithmetic blocks, such as subtraction, multiplication, and division are further designed. This work provides solid evidence that memristors can be used as the building block for in‐memory computing, targeting various low‐power edge computing applications.
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