Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations.SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots.In this paper we investigate various geometries of a SET in order to maximize the device's sensitivity to charge transfer between quantum dots.Through the use of finite element modeling we model the materials and geometries of an Al/Al 2 O 3 SET measuring the state of quantum dots in the Si substrate beneath.The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory.As such we provide useful techniques for any electronic device operating at the classical/quantum interface.