材料科学
开路电压
光伏系统
光伏
硒化物
光电子学
锑
能量转换效率
碲化镉光电
纳米技术
工程物理
电压
电气工程
工程类
冶金
硒
作者
Guangxing Liang,Mingdong Chen,Muhammad Ishaq,Xinru Li,Rong Tang,Zhuanghao Zheng,Zhenghua Su,Ping Fan,Xianghua Zhang,Shuo Chen
标识
DOI:10.1002/advs.202105142
摘要
Antimony selenide (Sb2 Se3 ) is an ideal photovoltaic candidate profiting from its advantageous material characteristics and superior optoelectronic properties, and has gained considerable development in recent years. However, the further device efficiency breakthrough is largely plagued by severe open-circuit voltage (VOC ) deficit under the existence of multiple defect states and detrimental recombination loss. In this work, an effective absorber layer growth engineering involved with vapor transport deposition and post-selenization is developed to grow Sb2 Se3 thin films. High-quality Sb2 Se3 with large compact crystal grains, benign [hk1] growth orientation, stoichiometric chemical composition, and suitable direct bandgap are successfully fulfilled under an optimized post-selenization scenario. Planar Sb2 Se3 thin-film solar cells with substrate configuration of Mo/Sb2 Se3 /CdS/ITO/Ag are constructed. By contrast, such engineering effort can remarkably mitigate the device VOC deficit, owing to the healed detrimental defects, the suppressed interface and space-charge region recombination, the prolonged carrier lifetime, and the enhanced charge transport. Accordingly, a minimum VOC deficit of 0.647 V contributes to a record VOC of 0.513 V, a champion device with highly interesting efficiency of 7.40% is also comparable to those state-of-the-art Sb2 Se3 solar cells, paving a bright avenue to broaden its scope of photovoltaic applications.
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