光电探测器
栅栏
光电子学
极化(电化学)
紫外线
比探测率
物理
材料科学
响应度
光学
化学
物理化学
作者
Chunyan Wu,Bin Zeng,Kunnan Zhou,Longqiang Shan,Junjie Wang,Li Wang,Yizhong Yang,Yubing Zhou,Lin‐Bao Luo
标识
DOI:10.1109/ted.2022.3160943
摘要
In this work, we demonstrate the fabrication of GaAs photodetector with grating perovskite (G-PVK) for a broadband enhanced ultraviolet (UV)-near-infrared (NIR) photodetection. The device shows a peak photoresponse under 530-nm illumination, presenting a responsivity of 0.3 A/W, a specific detectivity of $2.24\,\,\times10$ 10 Jones, and 0.6/0.56 ms for rise/fall time, respectively. Compared to the device without PVK, the dark current was suppressed by two orders of magnitude and the photoresponse was enhanced up to 215%. This should be ascribed to the effective spatial separation of the vertical build-in electric field between GaAs and G-PVK and the enhanced light trapping arising from the diffraction grating. The well-aligned grating also shows a high sensitivity to the polarized light, giving rise to a peak-to-valley ratio ${I}_{{\mathrm {max}}} / {I}_{{\mathrm {min}}}$ of about 2.14. This suggests the potential application of the device in the polarization-sensitive imaging system.
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