光电子学
材料科学
光电探测器
响应度
光电流
表面等离子共振
等离子体子
氧化铟锡
锗
红外线的
表面等离子体子
光学
纳米颗粒
纳米技术
图层(电子)
硅
物理
作者
Rui Lu,Cai-Wang Ge,Yi-Feng Zou,Kun Zheng,Dandan Wang,Tengfei Zhang,Lin‐Bao Luo
标识
DOI:10.1002/lpor.201500179
摘要
Abstract Light manipulation is paramountly important to the fabrication of high‐performance optoelectronic devices such as solar cells and photodetectors. In this study, a high‐performance near‐infrared light nanophotodetector (NIRPD) was fabricated based on a germanium nanoneedles array (GeNNs array) with strong light confining capability, and single‐layer graphene (SLG) modified with heavily doped indium tin oxide nanoparticles (ITONPs), which were capable of inducing localized surface plasmon resonance (LSPR) under NIR irradiation. An optoelectronic study shows that after modification with ITONPs the device performance including photocurrent, responsivity and detectivity was considerably improved. In addition, the ITONPs@SLG/GeNNs array NIRPD was able to monitor fast‐switching optical signals, the frequency was as high as 1 MHz, with very fast response rates. Theoretical simulations based on finite‐element method (FEM) revealed that the observed high performance was not only due to the strong light‐confining capability of the GeNNs array, but also due to the plasmonic ITONPs‐induced hot electron injection. The above results suggest that the present NIRPD will have great potential in future optoelectronic devices application. image
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