锌黄锡矿
微观结构
退火(玻璃)
光伏系统
材料科学
图层(电子)
太阳能电池
化学工程
能量转换效率
工作职能
光电子学
纳米技术
冶金
捷克先令
电气工程
工程类
作者
Afei Zhang,Zhengji Zhou,Wenhui Zhou,Dongxing Kou,Yin-Shan Meng,Yafang Qi,Shengjie Yuan,Sixin Wu
出处
期刊:Solar RRL
[Wiley]
日期:2019-07-24
卷期号:3 (10): 1900131-1900131
被引量:18
标识
DOI:10.1002/solr.201900131
摘要
A back contact interface in a kesterite Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic device plays an important role in fabricating high quality semiconducting photoactive layers and improving carrier extraction efficiency. However, uncontrolled decomposition reactions between the CZTSSe absorber layer and Mo electrode result in high series resistance and recombination at the back interface. The insertion of high work function MoO3 as an interfacial layer is considered as a promising way to engineer the back contact. This highlights the importance of elucidating the chemistry and dynamics of MoO3 at the Mo/kesterite interface in the CZTSSe annealing process. Herein, A detailed investigation of the elemental diffusion and chemistry of the back contact with the MoO3 intermediate layer during selenization is carried out. The results demonstrate that the presence of the MoO3 interfacial layer largely suppresses the chemical reaction between Mo and CZTSSe in the annealing process, inducing high quality CZTSSe absorbing films with fewer voids and reducing the thickness of MoSe2 from 209 to 84 nm when the optimized thickness of MoO3 is 10 nm. This finally leads to the increase in device efficiency from 9.02% to 10.92%, and the best performance where an efficiency of 11.37% is achieved.
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