黄铜矿
材料科学
热电材料
热电效应
纳米技术
工程物理
光电子学
热力学
冶金
铜
热导率
物理
工程类
复合材料
作者
Ami Nomura,Seongho Choi,Manabu Ishimaru,Atsuko Kosuga,Thomas C. Chasapis,Saneyuki Ohno,G. Jeffrey Snyder,Yuji Ohishi,Hiroaki Muta,Shinşuke Yamanaka,Ken Kurosaki
标识
DOI:10.1021/acsami.8b16717
摘要
Ternary compounds with a tetragonal chalcopyrite structure, such as CuGaTe2, are promising thermoelectric (TE) materials. It has been demonstrated in various chalcopyrite systems, including compounds with quaternary chalcopyrite-like structures, that the lattice parameter ratio, c/ a, being exactly 2.00 to have a pseudo-cubic structure is key to increase the degeneracy at the valence band edge and ultimately achieve high TE performance. Considering the fact that ZnSnSb2 with a chalcopyrite structure is reported to have c/ a close to 2.00, it is expected to have multiple valence bands leading to a high p-type zT. However, there are no complete investigations on the high temperature TE properties of ZnSnSb2 mainly because of the difficulty of obtaining a single-phase ZnSnSb2. In the present study, pure ZnSnSb2 samples with no impurities are synthesized successfully using a Sn flux-based method and TE properties are characterized up to 585 K. Transport properties and thermal analysis indicate that the structure of ZnSnSb2 remains chalcopyrite with no order-disorder transition and clearly show that ZnSnSb2 can be made to exhibit a high zT in the low-to-mid temperature range through further optimization.
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