材料科学
晶粒生长
薄膜
工程物理
粒度
冶金
光电子学
纳米技术
工程类
出处
期刊:Annual Review of Materials Science
[Annual Reviews]
日期:1990-08-01
卷期号:20 (1): 245-268
被引量:628
标识
DOI:10.1146/annurev.ms.20.080190.001333
摘要
in the average crystal orientation and can even result in epitaxial films. It is therefore not surprising that grain growth can profoundly affect the mechanical, electrical, and chemical properties of thin films. In this article the mechanisms and modes of grain growth in thin films will be reviewed. The focus will be on those factors that lead to the evolution of grain orientations as well as grain si zes. Spec ific attention will also be gi ven to those factors that allow control of microstructural evolution in thin films.
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