Optical sensitivity of Al/SRO/Si MOS diodes

In this work, the IV characteristics of an Al/SRO/Si MOSlike diode under illumination were studied. A strongly illuminationdependent photocurrent was observed although the structure was opaque on both sides. The possible mechanisms that create the photocurrent were studied. We believe that the photocarriers generated in a region surrounding the surface depletion layer dominate the photocurrent. The carriers generated by light in this region can diffuse into the depletion layer, and contribute to the photocurrent.