Single-crystalline In2S3nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 10(6) and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 10(4) A W(-1) and 2.28 × 10(7)%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.