响应度
APDS
雪崩光电二极管
带宽(计算)
光电子学
光学
光电二极管
缩放比例
材料科学
物理
光电探测器
工程类
电信
探测器
几何学
数学
作者
Masahiro Nada,Toshihide Yoshimatsu,Yoshifumi Muramoto,Haruki Yokoyama,Hideaki Matsuzaki
标识
DOI:10.1109/jlt.2014.2377034
摘要
This paper reviews our work on high-speed avalanche photodiodes (APDs) with a unique vertical-illumination structure, targeting 100-Gb/s systems and beyond. The APDs feature easy lateral and vertical scaling for achieving the required operation speed and responsivity. For 100-Gb/s systems, a 3-dB bandwidth of 18.5 GHz with multiplied responsivity of 9.1 A/W is obtained. For larger capacity applications such as 400-Gb/s systems, a maximum 3-dB bandwidth of over 35 GHz and responsivity at a gain of unity of almost 0.7 A/W are obtained by reducing diameter of an n-contact mesa and optimizing thickness and configuration of an absorption layer.
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