碘化物
电解质
检出限
介电谱
材料科学
薄膜晶体管
电化学
分析化学(期刊)
离子
无机化学
化学
纳米技术
色谱法
电极
图层(电子)
有机化学
物理化学
作者
Chuljin Hwang,Taehyun Kwak,Chang‐Hyun Kim,Joo Hee Kim,Sung-Jun Park
标识
DOI:10.1016/j.snb.2021.131144
摘要
In this study, rapid-detection iodide ion sensors based on sol-gel indium-gallium-zinc-oxide electrolyte gated thin-film transistors (IGZO-EGTFTs) have been examined. With a high electrical-double-layer capacitance (6.2 μF/cm2) at the interface between IGZO channel and physiological fluid (i.e., phosphate-buffered saline and artificial urine solution), the EGTFTs can be operated under 0.5 V with a high ON and OFF state current ratio above 108, and transconductance value of 1.14 mS. In addition to excellent electrical characteristics, the novel electrochemical reaction of IGZO-EGTFTs enables high selectivity and linear response over a wide detection range of iodide ions concentration (from 1 to 104 μM), the limit of detection as low as 1 μM, and response time below 0.1 s. The mechanism of iodide ions detection of IGZO-EGTFT was investigated based on electrochemical impedance spectroscopy analysis. We expect that IGZO-EGTFTs will contribute to the development of point-of-care rapid and reusable ion-sensors for human urine and serum.
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