Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

In recent years, monolithic integration of HEMT and LED was attempted to improve overall switching speed, reliability, and efficiency [1] . Typically, HEMT-LED monolithic integration can be realized via selective-epi-removal [2] or selective-area-growth [3] . Different from previous approaches that have adopted the lateral integration of HEMTs and LEDs, we have recently demonstrated an AlGaN/GaN HEMT that includes a built-in light emitter called a light-emitting HEMT (LE-HEMT) which uses a simple and cost-effective process [4] . In order to further improve the light intensity and efficiency, a single quantum well (QW) epi consisting of 10-nm u-GaN/3-nm InGaN inserted into a standard (STD) p-GaN/AlGaN/GaN HEMT epi structure was designed in this study. The electrical and optical characteristics were evaluated.