MRAM control transistor resilience against heavy-ion impacts

This work presents the simulation of different heavy ion impacts on the control transistors of two different types of magnetic random access memory cells (MRAM): a 32nm Bulk MRAM and 28nm FDSOI MRAM with buried oxide (BOX) thickness of 20nm. The Magnetic Tunnel Junction (MTJ) element of both MRAMs is simulated using a Compact Model described in C++. The control transistors are described using TCAD tools. The Linear Energy Transfer (LET) characteristic of simulated heavy-ions ranges from 10 to 80MeV-cm2/mg. The results show the robustness of these MRAM cells against these type of heavy ions, which is good for applications in harsh conditions.