材料科学
异质结
半导体
光电子学
氧化物
退火(玻璃)
氧气
绝缘体(电)
基质(水族馆)
电导
纳米技术
复合材料
凝聚态物理
冶金
化学
有机化学
地质学
物理
海洋学
作者
Nitzan Maman,Tzvi Templeman,Hadar Manis-Levi,Michael Shandalov,Vladimir Ezersky,Gabby Sarusi,Yuval Golan,Iris Visoly‐Fisher
标识
DOI:10.1002/admi.201800231
摘要
Abstract The electronic properties of the heterojunction formed by chemical bath deposition of a thorium‐ and oxygen‐doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, in this oxygen‐saturated system, the PbS properties are unaffected by exposure to oxygen. Control over the heterojunction conductance is achieved by tuning the interface oxide thickness, enabled by thermal treatment in air, resulting in the elimination of Fermi level pinning caused by interface induced gap states. The ability to control the interfacial insulator thickness post film‐growth is a unique feature of this system.
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