材料科学
带隙
化学气相沉积
过渡金属
兴奋剂
灵活性(工程)
光电子学
宽禁带半导体
纳米技术
催化作用
数学
生物化学
统计
化学
作者
Sandhya Susarla,Alex Kutana,Jordan A. Hachtel,Vidya Kochat,Amey Apte,Róbert Vajtai,Juan Carlos Idrobo,Boris I. Yakobson,Chandra Sekhar Tiwary,Pulickel M. Ajayan
标识
DOI:10.1002/adma.201702457
摘要
Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mox W1-x S2y Se2(1-y) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
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