Investigation of interfacial charge-carrier dynamics, degradation, and recombination mechanisms in single-junction perovskite solar cells with NiO x and SAM hole-transporting layers via steady-state drift-diffusion model simulations

Surface defects of low-temperature sputtered NiO x migrate into the perovskite bulk and are detrimental to the NiO x –perovskite interface and the cell stability. Bulk doping with copper and/or SAM surface passivation of the NiO x improve the stability.