Field‐Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors (Adv. Mater. 10/2014)

Y. Q. Liu, P. A. Hu and co-workers reveal on page 1559 a strategy for enhancing the performance of graphenebased devices by using an hexagonal boron nitride (h-BN) monolayer grown by chemical vapor deposition (CVD) as a dielectric layer. The strategy allows for effective size control of single-crystal monolayer h-BN domains, direct optical visualization of h-BN domains, and a clean h-BN surface. This study indicates that the interface between the graphene and h-BN monolayer plays a critical role in determining the device performance.