薄脆饼
沉积(地质)
硅烷
化学气相沉积
等离子体
材料科学
传质
过程控制
硅
过程(计算)
薄膜
光电子学
化学
机械
纳米技术
计算机科学
复合材料
物理
生物
沉积物
操作系统
古生物学
量子力学
作者
Antonios Armaou,Panagiotis D. Christofides
标识
DOI:10.1016/s0009-2509(98)00458-8
摘要
This paper focuses on modeling and control of a single-wafer parallel electrode plasma-enhanced chemical vapor deposition process with showerhead arrangement used to deposit a 500 Å amorphous silicon thin film on an 8 cm wafer. Initially, a two-dimensional unsteady-state model is developed for the process that accounts for diffusive and convective mass transfer, bulk and deposition reactions, and nonuniform fluid flow and plasma electron density profiles. The model is solved using finite-difference techniques and the radial nonuniformity of the final film thickness is computed to be almost 19%. Then, a feedback control system is designed and implemented on the process to reduce the film thickness nonuniformity. The control system consists of three spatially distributed proportional integral controllers that use measurements of the deposition rate at several locations across the wafer, to manipulate the inlet concentration of silane in the showerhead and achieve a uniform deposition rate across the wafer. The implementation of the proposed control system is shown to reduce the film thickness radial nonuniformity to 3.8%.
科研通智能强力驱动
Strongly Powered by AbleSci AI