Self-powered ultraviolet–visible–near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO2/MAPbI3/MoO3 heterostructure

Abstract We developed a self-powered broadband perovskite/silicon hybrid photodetector based on a novel heterostructure of Si/SnO 2 /MAPbI 3 /MoO 3 . The insertion of SnO 2 and MoO 3 was effective in reducing the recombination of photogenerated carriers. By optimizing the thickness of the SnO 2 layer, the detection capabilities of the hybrid photodetectors were significantly improved. The best-performing photodetector had a 40 nm SnO 2 layer, showing a detectivity of 2.23 × 10 12 Jones with a responsivity of 50.9 mA W −1 at 815 nm and a photocurrent/dark current ratio of 3.37 × 10 4 under zero bias. Furthermore, the photodetectors were sensitive to broadband irradiation from 300 to 1150 nm.