Hybrid silicon MOS optoelectronic memristor with non-volatile memory
作者
Bassem Tossoun,Xia Sheng,John Paul Strachan,Di Liang,Raymond G. Beausoleil
标识
DOI:10.1109/ipc47351.2020.9252481
摘要
We present a heterogeneously integrated III-V on silicon ring modulator integrated with a memristor for nonvolatile memory of optical signals. Demonstrated are hysteresis-loop I-V curves commonly characterizing memristors. The rings also exhibit a change in resonance between the ON and OFF state of the memristor.