Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation

As the new display technology, Micro-LEDs are of the advantages of low power consumption, high brightness, high resolution and fast response time. However, the strong surface non-radiative recombination significantly reduces their efficiency. Some techniques such as epitaxial growth or wet sulfide have been introduced to inhibit the surface recombination, but these expensive or unstable methods ignore the operability of industrial production. Herein, we use an ion implantation method to modify the high-density surface defects on the sidewall, thereby improve the luminous efficiency effectively by inhibiting carrier surface non-radiative recombination. The photoelectric performances of GaN-based Micro-LEDs after N ion implantation were studied. The characterization results indicated that the photoluminescence intensity of Micro-LEDs was increased by 7 times after passivation, which was attributed to the significant elimination of sidewall damage. In addition, the removal of the surface dangling bonds and oxidized nitrides (Ga–N or Ga-OH bonds) after the passivation process were further proved by Auger electron spectroscopy characterization. As a result of the N ion implantation, the external quantum efficiency of packaged Micro-LEDs chip increased about 33%. Therefore, this manuscript will provide a new direction for improving the photoelectric performance of Micro-LEDs.