Realization of flexible AlGaN/GaN HEMT by laser liftoff

Abstract We demonstrate fully fabricated AlGaN/GaN high electron mobility transistors (HEMTs) transferred from sapphire to copper tape on flexible polyethylene terephthalate using 193 nm excimer laser liftoff (LLO). The heterojunction is structurally intact after LLO, leading to preserved electron mobility μ n ∼1630 cm 2 V −1 s −1 and carrier concentration n s ∼10 13 cm −2 . The maximum drain saturation current decreased by ∼18% after transfer, which is a lower reduction than other reported transfer methods. The drain current of this flexible HEMT increased monotonically under tensile stress applied using a convex-shaped plate, while the threshold voltage shifted more negative in quantitative agreement with the expected piezoelectric charge for an intact heterojunction.