压控振荡器
异质结双极晶体管
相位噪声
比克莫斯
硅锗
电气工程
无线电频率
偏压
材料科学
双极结晶体管
晶体管
光电子学
电子工程
电压
工程类
硅
作者
Pujan K. C. Mishu,Moon-Kyu Cho,Ani Khachatrian,S. Büchner,Dale McMorrow,Pauline Paki,John D. Cressler,Ickhyun Song
标识
DOI:10.1109/tns.2022.3170377
摘要
The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio-frequency (RF) voltage-controlled oscillators (VCOs) have been investigated and the performance of proposed VCOs (IM VCOs) is compared with VCOs with conventional forward-mode (FM) SiGe-HBTs (FM VCOs). Where the high-frequency performance of IM VCOs is inevitably degraded due to unfavorable device optimization unlike FM VCOs, IM VCOs provide acceptable low-GHz VCO circuit performance. In terms of single-event effects (SEEs), the IM VCOs show reduced transient peaks and duration in comparison with conventional FM VCOs. In addition, the performance of the VCOs is analyzed in terms of transient error vector magnitude (TEVM) in an RF receiver (RX) using quadrature phase-shift keying (QPSK) modulation under a radiation environment. The IM VCOs in the RX circuit show better reliability under SEEs, offering 28.2% lower TEVM at a 64 Mb/s data rate, than that of the RX circuit with conventional FM VCOs. Therefore, the application of IM SiGe-HBT biasing circuits for RF VCOs can be a viable SEE-hardening technique for space-based RF systems. The VCO prototype was fabricated using IHP 130-nm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology.
科研通智能强力驱动
Strongly Powered by AbleSci AI