Controllable switching properties in an individual CH3NH3PbI3 micro/nanowire-based transistor for gate voltage and illumination dual-driving non-volatile memory

For the field effect transistor based on an individual CH₃NH₃PbI₃ (MAPbI₃) micro/nanowire, the conductance can accurately be controlled by gate voltage and visible light, showing gate voltage and illumination dual-drive non-volatile memory feature.