领域(数学分析)
铁电性
拓扑(电路)
材料科学
磁畴壁(磁性)
分子动力学
电荷(物理)
单层
拓扑缺陷
化学物理
凝聚态物理
物理
拓扑量子数
纳米技术
静电学
静电
领域工程
磁畴
电子结构
拉伸应变
作者
Yunfei Hong,Junkai Deng,Yang Yang,Ri He,Zhicheng Zhong,Xiangdong Ding,Jun Sun,Jefferson Zhe Liu
摘要
Ferroelectric domain walls play a fundamental role in the functionality of ferroelectric materials. As ferroelectric domain walls are mostly charge neutral to minimize electrostatic energy, the recently observed intrinsically stable charged 180° domain wall in a Bi monolayer opens uncharted research territory. In this Letter, we utilized deep potential molecular dynamics (DeePMD) simulations to investigate the finite-temperature dynamics of domain walls in the Bi monolayer. We discovered unique intertwined topological domain structures formed by two domain pairs (created by the charged 180° domain walls) separated by conventional 90° domain walls. These topological domain wall structures exhibit complex reaction dynamics when subjected to mechanical loading. They retain their structural topology up to a tensile strain of 4.70%. Beyond this strain, they begin to merge, cross, and ultimately transform into an identical counterpart, rotated by 90°. At strain exceeding 9%, the topological structure disintegrates into parallel charged 180° domain walls. Our findings provide unprecedented insights into the topological structures of charged 180° domain walls, laying the groundwork for further investigations and potential applications in electronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI