范德瓦尔斯力
铁电性
极化(电化学)
异质结
凝聚态物理
范德瓦尔斯曲面
材料科学
化学物理
范德瓦尔斯株
纳米技术
化学
物理
光电子学
范德瓦尔斯半径
量子力学
电介质
分子
物理化学
作者
Erqing Wang,Mingxiang Pan,Yuxiao Chen,Hui Zeng,Wenhui Duan,Huaqing Huang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2025-05-01
标识
DOI:10.1021/acs.nanolett.5c00398
摘要
Achieving multiple switchable polarization states at the nanoscale is crucial to high-density nonvolatile multistate memory beyond bistable ferroelectric architectures. Here, we propose a novel strategy to realize multistate polarization and enhance nonreciprocal transport in two-dimensional (2D) van der Waals ferroelectric heterostructures. By integrating two distinct 2D ferroelectric materials with substantial spontaneous polarizations, we demonstrate that the Bi/SnTe heterostructure can support up to eight distinct polarization states. Our first-principles analysis of transforming paths and corresponding energy barriers reveals that these states can be mutually switched by applying external electric fields, facilitated by a combination of intralayer polar distortion and interlayer sliding. Moreover, the Bi/SnTe heterostructure exhibits significantly enhanced nonlinear Hall and kinetic magnetoelectric effects, closely correlated to the multistate in-plane and persistent out-of-plane polarization. These findings open new possibilities for designing advanced ferroelectric devices with multiple polarization states and enhanced nonreciprocal transport, offering a pathway toward next-generation memory and nanoelectronics.
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