材料科学
钝化
钙钛矿(结构)
分子
化学物理
吸附
分子动力学
电负性
单层
能量转换效率
重组
纳米技术
光电子学
图层(电子)
结晶学
计算化学
物理化学
有机化学
化学
生物化学
基因
作者
Weixian Chen,Cheng Gong,Ru Li,Jiangzhao Chen,Zhigang Zang
标识
DOI:10.1002/adom.202202670
摘要
Abstract Interfacial defects result in serious carrier nonradiative recombination. The correlation between spatial conformation of modifiers and interfacial carrier dynamics is scarcely revealed. Here, an effective interfacial carrier dynamics and defect passivation modulation strategy via controlling spatial conformation of modification molecules is reported. Two kinds of similar Lewis base ligand molecules, biuret (BU) and dithiobiuret (DTBU), are employed to modify the surface of perovskite films. BU and DTBU can effectively passivate interfacial defects but the former is more effective than the latter on account of higher electronegativity and more advantageous molecular spatial arrangement. The planar symmetrical BU molecules can arrange compactly and orderly on the surface of perovskite films while the adsorbed DTBU molecules with a twisted asymmetrical structure are relatively chaotic. BU modification reduces interfacial energy offset, ameliorates improved interfacial energy band alignment, and speeds up hole extraction. In contrast, a much thicker adsorbed layer is yielded after DTBU treatment, which impedes carrier extraction and transfer and accordingly leads to grievous nonradiative recombination. The spatial conformation difference produces an inverse influence on device performance (positive for BU and negative for DTBU). The power conversion efficiency is much enhanced from 21.66% to 23.54% after BU modification along with improved stability.
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