Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films

Abstract Aluminum oxide-hydroxide thin films are fabricated by a simple chemical process, dip-dry deposition. The substrate is dipped in the solution and then dried on a heater plate. The dip-dry cycles are repeated to obtain necessary thickness. The deposition solution contains Al 2 (SO 4 ) 3 and NH 4 OH. To control resistivity of the films, Mg is doped by immersing the samples in a Mg(NO 3 ) 2 solution. The resistivity is reduced by the doping, and is about 10 4 Ωcm in the thickness direction. Thus the deposited films would be useful for interface layers in heterostructures and coating of electrodes in electrochemical systems.