纳米片
CMOS芯片
缩放比例
材料科学
光电子学
计算机科学
纳米技术
几何学
数学
作者
Naoto Horiguchi,Hans Mertens,T. Chiarella,S. Demuynck,V. Vega-Gonzalez,A. Vandooren,A. Veloso,M. Garcia Bardon,G. Sisto,Anshul Gupta,Zsolt Tökei,S. Biesemans,Julien Ryckaert
标识
DOI:10.1109/iedm45741.2023.10413701
摘要
3D stacked devices without area penalty from device-device space, such as complementary FET (CFET), is promising for post-nanosheet CMOS scaling. New MOL architectures, such as backside power delivery network (BSPDN) or Vertical-Horizontal-Vertical routing style, are required to connect 3D stacked devices without wiring congestions and resistance increase. Process/material innovations are necessary to enable high aspect ratio and 3D integration in CFET integration with new MOL architectures.
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