材料科学
过电位
塔菲尔方程
掺杂剂
密度泛函理论
兴奋剂
电子结构
Atom(片上系统)
化学物理
电导率
物理化学
计算化学
光电子学
化学
电化学
嵌入式系统
电极
计算机科学
作者
Héctor D. Morales-Rodríguez,K. Nguyen-Ba,Fei Chen,Qiang Shen,Rong Tu,L.M. Zhang,F.L. Castillo-Alvarado,Juan I. Rodriguez‐Hernandez,Jorge Roberto Vargas-García
标识
DOI:10.1016/j.mtcomm.2023.107786
摘要
This study provides experimental and theoretical analyses of the effects of Mn doping on the electronic structure of MoS2 nanosheets and its impact on the performance of the hydrogen evolution reaction (HER). Experiments show that Mn doping alters the electronic structure of MoS2. This leads to an enhanced HER activity. The Mn-MoS2 nanosheets with a Mn/Mo molar ratio of 1:15 exhibit an overpotential of approximately 238 mV at a current density of 10 mA/cm2 and a low Tafel slope of 68 mV/decade in 0.5 M H2SO4. Density Functional Theory calculations and Bader analysis indicate that the incorporation of Mn atoms into the basal plane of MoS2 nanosheets activates all in-plane S atom sites and three Mo atoms neighboring the Mn dopant, thereby reducing the adsorption free energy of H atoms. Further, the Mn dopant enhances the intrinsic electronic conductivity of MoS2 by reducing its bandgap, which leads to a rapid charge transfer across the basal plane during H2 evolution.
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