材料科学
薄膜晶体管
光电子学
阈值电压
双层
压力(语言学)
无定形固体
氧化物
带隙
氧化铟锡
晶体管
纳米技术
图层(电子)
电压
电气工程
膜
化学
冶金
语言学
哲学
工程类
有机化学
生物化学
作者
Tae Sun Park,Dongil Ho,H. H. Park,Sung Kyu Park,Choongik Kim
标识
DOI:10.1016/j.mssp.2023.108000
摘要
In this work, we report solution-processed bilayer channel thin film transistors (TFTs) based on solution-processed amorphous oxide semiconductors (AOSs) that fulfill both superb electrical performance and device stability against applied alternating current (AC) drain bias stress. Acceptor-like states generation via hot carrier effect (HCE) is a representative device degradation mechanism suggested for AOS-based TFTs when subjected to AC bias stress, featuring threshold voltage (Vth) shift and on-current (Ion) lowering. As excess electric field and accumulated carriers in the AOS channel cause HCE, alleviating carrier accumulation is a key solution for mitigating HCE. Bilayer channel TFTs comprising two different AOSs could work as a countermeasure to overcome HCE since proper energy band alignment of two channels creates a conduction band difference that act as the energy barrier for carriers. In this regard, we employed amorphous indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) as bottom and top layer, respectively, for bilayer channel TFT. Designed bilayer channel showed a conduction band difference of 0.18 eV, and fabricated TFT based on this architecture exhibited high mobility over to 5.9 cm2/Vs with slight Vth shift of 0.1 V and Ion lowering of 1.7% for 1000 s against applied AC stress, demonstrating device stability under AC drain bias stress.
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