材料科学
退火(玻璃)
辐照
离子
氩
等离子体
离子注入
制作
等离子体处理
晶体缺陷
光电子学
分析化学(期刊)
原子物理学
复合材料
结晶学
化学
量子力学
有机化学
病理
核物理学
色谱法
替代医学
物理
医学
作者
Shota Nunomura,Takayoshi Tsutsumi,Isao Sakata,Masaru Hori
摘要
The defect generation and recovery at the SiO2/Si interface are studied in argon (Ar) plasma irradiation and consecutive annealing. The defects are generated by the Ar plasma irradiation and recovered by annealing. The recovery of defects strongly depends on the origins of defect generation, i.e., photon irradiation or ion bombardment. The photon-induced defects are nearly fully recovered by annealing at 300 °C, whereas the ion-induced defects are not sufficiently recovered. With high-energy bombardments of ions at ⪆200 eV, the residual defects are created at the 5 nm-thick thermal-SiO2/Si interface. The ion energy should be properly controlled in plasma processing for high-performance device fabrication.
科研通智能强力驱动
Strongly Powered by AbleSci AI