发光二极管
氧化铟锡
材料科学
光电子学
铟
电极
光学
锡
氧化物
纳米技术
薄膜
冶金
物理
量子力学
作者
Cesur Altinkaya,Daisuke Iida,Kazuhiro Ohkawa
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2024-06-04
卷期号:32 (13): 23245-23245
被引量:3
摘要
Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the light output of InGaN-based micro-light-emitting diodes (micro-LEDs). ITO p-electrodes exhibit high transmittance of ∼ 80% across the visible spectrum and low resistivity, while metal p-electrodes exhibit negligible transmittance and significant absorption. The 20 × 20 µm
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