Improved dielectric and energy storage capacity of PVDF films via incorporating wide-bandgap silicon oxide decorated graphene oxide

In this work, wide-bandgap silicon oxide decorated graphene oxide (GO@SiO2) hybrid was simply synthesized by in-situ hydrothermal method. The obtained GO@SiO2 as a filler was then introduced into poly (vinylidene fluoride) (PVDF) matrix to prepare GO@SiO2/PVDF composite dielectric films via solution casting method. A comprehensive dielectric and energy storage capacity of PVDF based dielectric films were simultaneously achieved, indicating synergistic enhancement of GO and SiO2. For the 0.2 wt% GO@SiO2/PVDF system, a relatively high dielectric constant (ɛ' = 12.9), an enhanced breakdown strength (404.9 kV mm−1) and an improved discharged density (5.7 J cm−3) were obtained, being 153 %, 111 % and 148 % higher than those of neat PVDF, respectively. Such study provided a new strategy in obtaining flexible and large energy storage dielectric films.