Enhancement of ferroelectricity in chemical-solution-deposited ZrO2 thin films through fine phase transition control

Recent studies have highlighted the ferroelectric potential of ZrO2 thin films, which offer advantages over HfO2-based ferroelectric materials, such as lower thermal budget and greater natural abundance. In this research, pure ZrO2 ferroelectric thin films were fabricated on Si substrates using chemical solution deposition with all-inorganic precursors. We explored the impacts of film thickness and HfO2 seed layers on phase transition and ferroelectric properties. Notably, an 11 nm thick ZrO2 film exhibited ferroelectric behavior with a remanent polarization of 12.6 μC/cm2. Due to the combined effects of tensile stress and surface energy, the increase in thickness to 30 nm led to a phase transition from the orthorhombic phase to the monoclinic phase and a resultant decrease in remanent polarization. Additionally, the introduction of a HfO2 seed layer facilitated the crystallization of the ferroelectric o-phase, enhancing the remanent polarization to 16.5 μC/cm2 in our ∼8 nm thick ZrO2 thin film with a ∼2 nm thick HfO2 seed layer. These findings provide valuable insights into optimizing ferroelectric properties in ZrO2 thin films through phase transition control.