Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET

Experimental evidence of electron velocity enhancement by hot-electron injection into the channel of a GaAs vertical FET has been obtained for the first time. The maximum transconductance and the average electron velocity are 234 mS/mm and 6.4 × 107 cm/s, which are 1.4 and 1.9 times as large as those of a conventional vertical FET.