Bottom‐Imprint Method for VSS Growth of Epitaxial Silicon Nanowire Arrays with an Aluminium Catalyst

A bottom-imprint method to fabricate high-quality Si [100] nanowire arrays is described (see figure). This new approach combines the functions of a highly ordered anodic aluminum oxide (AAO) template that acts as both a stamp and a template. Vertically aligned, Al-catalyzed Si nanowire (NW) arrays are grown epitaxially on the Si substrate with a narrow size distribution. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.