InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE

Carbon-doped based InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source metal organic molecular beam epitaxy (MOMBE) are reported. Large area devices (emitter diameter 70μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm-3. Ideality factors (<1.1) were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double (DHBT) heterojunction devices. Vceos of 12 and 19V for SHBTs and DHBTs, respectively, were measured.