Research on Mg2Si films prepared using thermal evaporation with Al doping

Thermal evaporation was used to prepare the Al doped Mg₂Si film on Si substrates. The influences of the structure, morphology, Raman spectrum, and electrical resistivity of Mg₂Si film with Al doping were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), four-point probe (FPP), Raman spectroscopy, and surface profiler. The results of XRD indicate that after Al is doped, the intensity of Mg₂Si diffraction peak is enhanced and the grain size become larger. FESEM results indicate that after Al is doped, Mg2Si grains aggregate into clusters, and the internal structure of the thin films is dense. Raman results showed that after Al is doped, a redshift happened at the Raman characteristic peak near 256cm^-1. FPP results show that the electrical resistivity of Mg₂Si thin films decrease after doping Al.