Lv6
2620 积分 2022-02-22 加入
Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis
5天前
已完结
Increasing the breakdown capability of superjunction power MOSFETs at the edge of the active region
11天前
已完结
Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET
11天前
已完结
Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing
11天前
已完结
Novel High-Tolerance Termination With Resistive Field Plate for 600 V Super-Junction Vertical Double-Diffused MOSFET
1个月前
已完结
Hybrid Junction Termination Consisting of a Variation Lateral Doping Structure and a Spiral Polysilicon Resistive Field Plate
1个月前
已完结
Mobile ions entering the IGBT gate oxide - electrical detection and failure localization by lock-in thermography
1个月前
已完结
Investigation of the Single-Pulse Avalanche Capability of Commercial 1.2kV SiC MOSFETs With Different Structures
1个月前
已完结
Reducing Reverse Recovery Charge in Trench Power MOSFETs Using Platinum Traps Introduced by Implantation and PVD
1个月前
已完结
A failure mechanism and improved method for abnormal IDS leakage current of shield gate trench MOSFET
1个月前
已完结
皖公网安备34019202002308
