黑硅
材料科学
薄脆饼
硅
钝化
光电子学
蚀刻(微加工)
图层(电子)
纳米结构
纳米技术
作者
Chia-Hsun Hsu,Shih-Mao Liu,Shui‐Yang Lien,Xiaoying Zhang,Yun-Shao Cho,Yanhua Huang,Sam Zhang,Songyan Chen,Wen‐Zhang Zhu
出处
期刊:Nanomaterials
[MDPI AG]
日期:2019-09-29
卷期号:9 (10): 1392-1392
被引量:7
摘要
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.
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