材料科学
氧化锡
扫描电子显微镜
薄膜
纳米晶材料
带隙
锡
傅里叶变换红外光谱
化学工程
基质(水族馆)
旋涂
铜
兴奋剂
煅烧
原子层沉积
氧化铜
分析化学(期刊)
纳米技术
催化作用
冶金
复合材料
光电子学
有机化学
化学
工程类
地质学
海洋学
作者
Emeka Charles Nwanna,Patrick Ehi Imoisili,Tien-Chien Jen
标识
DOI:10.1016/j.jmrt.2022.01.081
摘要
Tetrakis (diethylamino)tin (IV) (TDMASn) ((C 2 H 5 ) 2 N) 4 Sn is an organometallic tin precursor with excellent purity that is used in the atomic layer deposition (ALD) technique. Due to the high expense of ALD equipment, the use of this precursor for the manufacture of nanocrystalline tin oxide (SnO 2 ) thin films has been limited. In this study, copper oxide (CuO) doped tin oxide (SnO 2 ) was prepared using TDMASn as SnO 2 precursor, copper (II) sulphate pentahydrate (CuSO 4 ·5H 2 O) as Cu precursor and a green catalyst (Allium cepa) as a reducing agent via spin coating technique and deposited on a glass substrate. The deposited thin film was then annealed and characterized using, X-ray diffraction (XRD), scanning electron microscope (SEM), elemental composition (EDX), UV–Visible (UV–Vis) spectroscopy, Fourier transform infrared (FTIR), and electrical analysis. The correlation between the different analyses with regards to the calcining temperature of the fabricated thin film was discussed. A redshift was observed in the optical energy band gap of the film. Also, the film's electrical properties demonstrated ideal semiconducting behaviours.
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