Investigation of resistive switching in lead-free bismuth–silver halide double perovskite

Abstract In this work, lead-free double perovskite Cs 2 BiAgBr 6 film is fabricated and employed into resistive switching (RS) memory device with a metal/insulator/metal structure. The RS performances of the prepared device are examined both experimentally and theoretically. High-quality Cs 2 BiAgBr 6 film is fabricated via a post-vacuum treatment and characterized systematically. In the prepared memory device, bipolar RS is observed with a high ON/OFF ratio, and the retention and endurance performances are measured. First-principles calculations based on the density functional theory reveal that the bromide vacancies (V Br ) in Cs 2 BiAgBr 6 render it metallic characteristics. Therefore, we propose that the migration of V Br under electrical fields formed and ruptured the conductive filament, leading to the RS behaviors of memory device.