Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

A large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. The recently proposed magnetic Weyl semimetal ${\mathrm{EuCd}}_{2}{\mathrm{Sb}}_{2}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-point-related band structure near the Fermi energy. Here, we report the fabrication of ${\mathrm{EuCd}}_{2}{\mathrm{Sb}}_{2}$ single-crystalline films and control of their anomalous Hall effect by a film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating a clear energy dependence of the intrinsic AHE.