Flexible Dual‐Gate Organic Field‐Effect Transistors for Pressure Sensing

Chapter 30 Flexible Dual-Gate Organic Field-Effect Transistors for Pressure Sensing Heisuke Sakai, Heisuke Sakai Kokushikan University, School of Science and Engineering, Department of Electronics and Informatics, 4-28-1, Setagaya, Setagaya-Ku, 154-8515 JapanSearch for more papers by this authorOlamikunle O. Ogunleye, Olamikunle O. Ogunleye Federal University Lokoja, Department of Physics, Adankolo, Lokoja, 260101 NigeriaSearch for more papers by this authorHideyuki Murata, Hideyuki Murata Japan Advanced Institute of Science and Technology (JAIST), Graduate School of Materials Science, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 JapanSearch for more papers by this author Heisuke Sakai, Heisuke Sakai Kokushikan University, School of Science and Engineering, Department of Electronics and Informatics, 4-28-1, Setagaya, Setagaya-Ku, 154-8515 JapanSearch for more papers by this authorOlamikunle O. Ogunleye, Olamikunle O. Ogunleye Federal University Lokoja, Department of Physics, Adankolo, Lokoja, 260101 NigeriaSearch for more papers by this authorHideyuki Murata, Hideyuki Murata Japan Advanced Institute of Science and Technology (JAIST), Graduate School of Materials Science, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 JapanSearch for more papers by this author Book Editor(s):Sangita Das, Sangita Das Durham University, Stockton Road, Lower Mountjoy, Durham, United KingdomSearch for more papers by this authorSabu Thomas, Sabu Thomas Mahatma Gandhi University, Priyadarshini Hills P.O., Kottayam, Kerala, IndiaSearch for more papers by this authorPartha Pratim Das, Partha Pratim Das Yonsei University, Yonseiro-50, Seodaemungu, Seoul, KS, South KoreaSearch for more papers by this author First published: 22 December 2023 https://doi.org/10.1002/9783527834266.ch30 AboutPDFPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShareShare a linkShare onEmailFacebookTwitterLinkedInRedditWechat Summary The development of sensors based on organic field-effect transistors (OFETs) for use in flexible sensors has attracted research interest. The research targets include OFET-based low-voltage sensors capable of highly sensitive detection of chemical or physical signals. Here, we developed a flexible pressure sensor based on flexible OFETs. The low-voltage (−5 V) dual-gate OFET operates by strongly modulating the drain current ( I D ) using a novel device architecture composed of a piezoelectric sensing layer and a low-voltage OFET readout. Dual-gate OFET-based pressure sensors consist of a pressure sensing element made of piezoelectric poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] and a low-voltage OFET readout. The pressure-induced response of I D , which is due to the depletion of charge carriers accumulated in the channel of the OFET, depends on the magnitude of the pressure load. This response indicates that a voltage is generated in the piezoelectric P(VDF-TrFE) layer by the application of pressure, which causes a shift in the threshold voltage ( V TH ). The magnitude of the generated voltage is derived as the magnitude of the V TH shift, and then the piezoelectric constant d 33 of the piezoelectric P(VDF-TrFE) layer is derived. As the d 33 value is in good agreement with that obtained by direct measurement, the operation mechanism of the dual-gate OFET-based pressure sensor is identified as the piezoelectric behavior of the P(VDF-TrFE) layer. A flexible dual-gate OFET-based pressure sensor that employs a thin polyethylene naphthalate (PEN, 25 μm) film as a substrate is also introduced. Because the substrate is flexible, the pressure response of the device on a curved surface was observed. The performance was equivalent to that of a device fabricated on a glass substrate. I D varied in response to a pressure load even without the application of the gate voltage. The magnitude of the change in I D in response to the applied pressure was approximately 2.5 times that of the device on the glass substrate. 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