Shortwave Infrared Organic Photodiodes Realized by Polaron Engineering

Abstract A novel approach for developing shortwave IR (SWIR) organic photodiodes (OPDs) using doped polymers is presented. SWIR OPDs are challenging to produce because of the limitations in extending the absorption of conjugated molecules and the high dark currents of SWIR‐absorbing materials. Herein, it is shown that the conversion of bound polarons to free polarons by light energy can be utilized as an SWIR photodetection mechanism. To maximize the bound‐polaron density and bound‐to‐free polaron ratio of the doped polymer film, the doping process is engineered and dopant molecules are diffused into the crystalline domain of the polymer matrix and a direct correlation between the bound‐to‐free polaron ratio and device performance is confirmed. The optimized double‐doped SWIR OPD exhibits a high external quantum efficiency of 77 100% and specific detectivity of 1.11 × 10 11 Jones against SWIR. These findings demonstrate the application potential of polarons as alternatives for Frenkel excitons in SWIR OPDs.