Solar-Blind Ultraviolet Detection Based on Algan/GaN Heterojunction

A solar-blind ultraviolet metal-semiconductor-metal photodetector based on dual-color AlGaN/GaN heterostructure was fabricated and tested. The device showed good photo-response in solar-blind ultraviolet, by employing a single AlGaN/GaN layer. Spectrum responses of the photodetector were investigated by changing the frequency of incident light signals and the bias voltages. The peak response was 0.288 A/W at 260 nm and 0.322 A/W at 366 nm at the bias of 5 V.