薄膜晶体管
材料科学
阈值电压
光电子学
晶体管
电压
透射率
终端(电信)
无定形固体
图层(电子)
半导体
场效应
电气工程
纳米技术
计算机科学
化学
工程类
电信
有机化学
作者
J.Y. Lee,Byeong‐Kwon Ju,Sang Yeol Lee
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2023-10-18
卷期号:5 (11): 6189-6196
标识
DOI:10.1021/acsaelm.3c01105
摘要
We report on a metal-capping (MC) structure with threshold voltage (Vth) tunability via four-terminal driving. Amorphous oxide semiconductors (AOSs) are emerging as promising next-generation semiconductor materials due to their remarkable properties, such as high field-effect mobility, uniformity, and excellent transmittance in the visible light region. The MC structure is a simple structure that can improve the characteristics of a thin-film transistor (TFTs) based on AOSs. By applying additional voltage to this MC layer, we were able to control the amount and direction of carrier flow during the I–V operation. With the four-terminal drive, the Vth of the MC TFT can be modulated according to the voltage applied to the MC layer. When a negative voltage is applied to the MC layer, the Vth shifts to the negative region, and when a positive voltage is applied, the Vth shifts to the positive region. With the four-terminal MC TFT, we expect to be able to compensate for Vth modulated by external stresses that significantly affect the display pixels. Furthermore, it is expected that this operating principle can be utilized in many application systems, such as sensors.
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